Honors Thesis Archive

Author	Lydia Kisley
Title	Integration of Gallium Nitride Nanowires with Nanofabricated Silicon Circuits
Department	Chemistry
Advisors	David Finster, Ray Dudek, and Dan Fleisch
Year	2010
Honors	Departmental Honors
Full Text	View Thesis (1218 KB)
Abstract	This project successfully demonstrated that GaN nanowires can be integrated into silicon circuits. Basic silicon circuits were designed and fabricated, containing p-MOSFETs and specific contact areas where nanowires could be deposited. GaN nanowires were aligned to the contacts by dielectrophoresis and contacted with an additional metal layer. Optical and scanning electron microscope images and current-voltage measurements were taken to image and test the devices. The transistors were shown to have an 85% working rate and the nanowires functioned in the circuit as diodes when correctly aligned.